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VT3060G, VFT3060G, VBT3060G, VIT3060G
Vishay General Semiconductor
Dual High
Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low VF = 0.
40 V at IF = 5 A
TO-220AB
TMBS ®
ITO-220AB
VT3060G
3 2 1
PIN 1
PIN 2
PIN 3
CASE
TO-263AB
K
VFT3060G
123
PIN 1
PIN 2
PIN 3
TO-262AA K
2 1
VBT3060G
PIN 1
K
PIN 2
HEATSINK
VIT3060G
3 2 1
PIN 1
PIN 2
PIN 3
K
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 15 A TJ max.
Package
2 x 15 A 60 V 150 A 0.
61 V
150 °C TO-220AB, ITO-220AB, TO-263AB, TO-262AA
Diode variations
Common cathode
FEATURES
• Trench MOS Schottky technology • Low forward
voltage drop, low power losses • High efficiency operation • Meets MS...