VTP Process Photodiodes
VTP8350
PACKAGE DIMENSIONS inch (mm)
CASE 11 CERAMIC CHIP ACTIVE AREA: .
012 in2 (7.
45 mm2)
PRODUCT DESCRIPTION
Planar silicon photodiode mounted on a two lead ceramic substrate and coated with a thick layer of clear epoxy.
These diodes exhibit low dark current under reverse bias and fast speed of response.
ABSOLUTE MAXIMUM RATINGS
Storage Temperature: Operating Temperature: -20°C to 75°C -20°C to 75°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTP curves, page 46)
VTP8350
SYMBOL ISC TC ISC VOC TC VOC ID RSH CJ Re SR λrange λp VBR θ1/2 NEP D* CHARACTERISTIC Short Circuit Current ISC Temperature Coefficient Open Circuit
Voltage VOC Temperature Coefficient Da...