N-CHANNEL 700V - 0.
58 Ω - 10.
6A TO-247 Zener-Protected PowerMESH™III
MOSFET
TYPE STW10NC70Z
s s
STW10NC70Z
VDSS 700 V
RDS(on) 0.
75 Ω
ID 10.
6 A
s s s
TYPICAL RDS(on) = 0.
58 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247
DESCRIPTION The third generation of MESH OVERLAY ™ Power
MOSFETs for very high
voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.
Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
APPLICATIONS s SINGLE-ENDED ...