ST W15NB50 ST H15NB50FI www.
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STW15NB50 STH15NB50FI
N-CHANNEL 500V - 0.
33Ω - 14.
6A T0-247/ISOWATT218 PowerMESH™
MOSFET
V DSS 500 V 500 V R DS(on) 0.
36 Ω 0.
36 Ω ID 14.
6 A 10.
5 A
TYPE
TYPICAL RDS(on) = 0.
33 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE
VOLTAGE RATING 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
3
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power
MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives th...