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STW16NB60
N-CHANNEL 600V - 0.
3Ω - 16A TO-247 PowerMesh™
MOSFET
TYPE STW16NB60
s s s s s
VDSS 600V
RDS(on) 0.
35 Ω
ID 16 A
TYPICAL RDS(on) = 0.
3Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED
1
3 2
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power
MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprieraty edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
TO-247
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