PROVISIONAL
Wisdom Semiconductor
WFB33N25
N-Channel
MOSFET
Features
■ RDS(on) (Max 0.
094 Ω )@VGS=10V ■ Gate Charge (Typical 37nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power
MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply, DC-AC converters for uninterruped power supply, motor control.
Symbol 1.
Gate{
{ 2.
Drain
●
◀▲
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{ 3.
Sourc...