WFD7N65L Product Description
Silicon N-Channel
MOSFET
Features
� 7A,650V,RDS(on)(TYP:1.
0Ω)@VGS=10V � Ultra-low Gate Charge(Typical 21nC) � Fast Switching Capability � 100%Avalanche Tested � Improved dv/dt capability
General Description
This Power
MOSFET is produced using advanced planar stripe,VDMOS technology.
This technology has been especially designed to minimize on -state resistance,have a high rugged avalanche characteristics.
This devices is specially well suited for high efficiency switch mode power supplies , power factor correction, UPS and a electronic lamp ballast base on half bridge.
D
G S
Absolute Maximum Ratings
Symbol
Parameter
VDSS ID
Drain Source
Voltage Continuous Dra...