PROVISIONAL
Wisdom Semiconductor
WFW28N60
Features
■ RDS(on) (Max 0.
22 Ω )@VGS=10V ■ Gate Charge (Typical 120nC) ■ Improved dv/dt Capability, High Ruggedness ■ 100% Avalanche Tested ■ Maximum Junction Temperature Range (150°C)
General Description
This Power
MOSFET is produced using Wisdom’s advanced planar stripe, DMOS technology.
This latest technology has been especially designed to minimize on-state resistance, have a high rugged avalanche characteristics.
These devices are well suited for high efficiency switch mode power supplies.
N-Channel
MOSFET
Symbol 1.
Gate{
TO-247
{ 2.
Drain
●
◀▲
● ●
{ 3.
Source
G DS
Absolute Maximum Ratings
Symbol VDSS
ID
IDM VGS EAS EAR dv/dt
PD
TSTG, TJ...