WNM3008
Single N-Channel, 30V, 3.
1A, Power
MOSFET
VDS (V) 30
Rds(on) (ȍ) 0.
044@ VGS=10V 0.
057@ VGS=4.
5V
WNM3008
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willsemi.
com
Descriptions
The WNM3008 is N-Channel enhancement MOS Field Effect Transistor.
Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge.
This device is suitable for use in DC-DC conversion, power switch and charging circuit.
Standard Product WNM3008 is Pb-free.
Features
SOT-23 D 3
12 GS Pin configuration (Top view)
z Trench Technology z Supper high density cell design z Excellent ON resistance for higher DC current z Extremely Low Threshold
Voltage z Small package SOT-23
Applications
z Driver for Relay, Solenoid, M...