WT6401
P-Channel Enhancement Mode Power
MOSFET
1 GATE
SOURCE
3 DRAIN
DRAIN CURRENT -4.
3 AMPERS DRAIN SOUCE
VOLTAGE -12
VOLTAGE
2
Features:
*Super High Dense Cell Design For Low RDS(ON) RDS(ON)50mΩ@VGS=10V *Rugged and Reliable *Simple Drive Requirement *Fast Switching *1.
8V Gate Rated *SOT-23 Package
3 1 2
SOT-23
Applications
*Power Management in Notebook Computer *Portable Equipment *Battery Powered System
com
Maximum Ratings(T =25�C Unless Otherwise Specified)
A
Rating
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current3 ,VGS@10V(TA ,VGS@10V(TA Pulsed Drain Current1 Total Power Dissipation(TA=25 ℃ ) Maximum Junction-ambient3 Operating Junction and Sto...