WTC6401
P-Channel Enhancement Mode Power
MOSFET
1 3 DRAIN
DRAIN CURRENT -4.
3 AMPERES DRAIN SOURCE
VOLTAGE -12
VOLTAGE
*Super High Dense Cell Design For Low RDS(ON) com R DS(ON) 50mΩ@V GS =-4.
5V *Rugged and Reliable *Simple Drive Requirement *Fast Switching *SOT-23 Package
Features:
GATE
SOURCE
2
3 1 2
SOT-23
Applications
*Power Management in Notebook Computer *Portable Equipment *Battery Powered System
Maximum Ratings(T =25 C Unless Otherwise Specified)
A
Rating
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current 3 ,(TA=25˚C) ,(TA=70˚C) Pulsed Drain Current
1
Symbol
VDS VGS ID I DM PD R θJA TJ , Tstg
Value
-12 ±8 -4.
3 -3.
4 -12 1.
38 90 - 55~+150
Uni...