WTL2622
Dual N-Channel Enhancement Mode
MOSFET
P b Lead(Pb)-Free
1 GATE 6 DRAIN
DRAIN CURRENT 2.
5 AMPERES DRAIN SOURCE
VOLTAGE 20
VOLTAGE
Features:
*Super High Dense Cell Design For Low RDS(ON) RDS(ON) 80mΩ@VGS=4.
5V *Rugged and Reliable *Capable of 2.
5V Gate Drive *Simple Drive Requirement *SOT-26 Package
2 SOURCE 4 DRAIN 1 6 5 4
2
3
SOT-26
3 GATE 5 SOURCE
Maximum Ratings (TA=25˚C Unless Otherwise Specified)
Rating Drain-Source
Voltage Gate-Source
Voltage
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Symbol VDS VGS ID IDM IS PD RθJA TJ,Tstg
Value 20 ±10 2.
5 8 1.
25 1 125 -55~+150
Unit V
Continuous Drain Current1, VGS@4.
5V, TA=25˚C -Pulsed2 Drain-Source Diode Forward Current1
A W ˚C/W ˚C
Total Power Dissi...