Composite Transistors
XP1507
Silicon NPN epitaxial planer transistor
Unit: mm
2.
1±0.
1 0.
425 1.
25±0.
1 0.
425
0.
2±0.
05 0.
12 – 0.
02
+0.
05
High breakdown
voltage and for low noise amplification
0.
65
s Features
q q
Two elements incorporated into one package.
(Emitter-coupled transistors) Reduction of the mounting area and assembly cost by one half.
2.
0±0.
1
1 2 3
5
0.
65
4
0.
9± 0.
1
q
2SD814 × 2 elements
0.
7±0.
1
s Basic Part Number of Element
0.
2
s Absolute Maximum Ratings
Parameter Collector to base
voltage Rating Collector to emitter
voltage of Emitter to base
voltage element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage tempe...