Composite Transistors
XP4506
Silicon NPN epitaxial planer transistor
Unit: mm
0.
425 1.
25±0.
1 0.
425
0.
2±0.
05
For amplification of low frequency output
2.
1±0.
1
0.
65
q q q
High emitter to base
voltage VEBO.
High forward current transfer ratio hFE.
Low ON resistor Ron.
2.
0±0.
1
s Features
0.
65
1 2 3
6 5 4
0.
2
0.
9±0.
1
s Basic Part Number of Element
q
0 to 0.
1
2SD1915F × 2 elements
0.
7±0.
1
0.
2±0.
1
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Rating Emitter to base
voltage of element Collector current Peak collector current Total power dissipation Overall Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PT Tj Tstg...