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STY34NB50
N - CHANNEL 500V - 0.
11Ω - 34 A - Max247 PowerMESH™
MOSFET
TYPE ST Y34NB50
s s s s s s s
V DSS 500 V
R DS(on) 0.
13 Ω
ID 34 A
TYPICAL RDS(on) = 0.
11 Ω EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE
VOLTAGE RATING 100% AVALANCHE TESTED LOW INTRINSIC CAPACITANCE GATE CHARGE MINIMIZED REDUCED
VOLTAGE SPREAD
1
2
3
DESCRIPTION Using the latest high
voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power
MOSFETs with outstanding performances.
The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilitie...