YJL3416A
RoHS
COMPLIANT
N-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS
20V
● ID 6.
0A
● RDS(ON)( at VGS=4.
5V)
＜18 mohm
● RDS(ON)( at VGS=2.
5V)
＜22 mohm
● RDS(ON)( at VGS=1.
8V)
＜39 mohm
● ESD Protected Up to 3.
5KV (HBM)
General Description
● Trench Power LV
MOSFET technology
● High Power and current handing capability
Applications
● PWM application
● Load switch
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-source
Voltage
Gate-source
Voltage
Drain Current Pulsed Drain Current A
TA=25℃ @ Steady State TA=70℃ @ Steady State
Total Power Dissipation @ TA=25℃
Thermal Resistance Junction-to-Ambient @ Ste...