YJQ4666B
RoHS
COMPLIANT
P-Channel Enhancement Mode Field Effect Transistor
Product Summary
● VDS ● ID ● RDS(ON)( at VGS=-4.
5V) ● RDS(ON)( at VGS=-2.
5V) ● RDS(ON)( at VGS=-1.
8V)
-16V
-7A <32 mohm <42 mohm <60 mohm
General Description
● Trench Power LV
MOSFET technology
● Low RDS(ON)
● Low Gate Charge
Applications
● Battery charge
● Load switching in Cellular handset
● Ultraportable applications
■ Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Maximum
Unit
Drain-source
Voltage
VDS -16 V
Gate-source
Voltage Drain Current Pulsed Drain Current A
TA=25℃ TA=70℃
Total Power Dissipation @ TA=25℃ Thermal Resistance Junction-to-Ambient B
Thermal Resistance Jun...