SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET
ISSUE 3 JANUARY 1996 FEATURES * VDS - 200V 7
ZVP1320F
D S
PARTMARKING DETAIL -
MT
G
ABSOLUTE MAXIMUM RATINGS.
PARAMETER Drain-Source
Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate Source
Voltage Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER Drain-Source Breakdown
Voltage Gate-Source Threshold
Voltage Gate-Body Leakage Zero Gate
Voltage Drain Current On-State Drain Current(1) SYMBOL MIN.
BVDSS VGS(th) IGSS IDSS ID(on) -100 80 25 50 15 5 8 8 8 16 -200 -1.
5 -3.
5 20 -10 -50 SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -200 -35 -400
± 20
UNIT V mA mA V mW °C
330 -55 to +150
ELECTRI...