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MMBT2222

SEMTECH
Part Number MMBT2222
Manufacturer SEMTECH
Description NPN Transistor
Published May 13, 2016
Detailed Description MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications SOT-...
Datasheet PDF File MMBT2222 PDF File

MMBT2222
MMBT2222

Overview
MMBT2222 / MMBT2222A NPN Silicon Epitaxial Planar Medium Power Transistor for switching and amplifier applications SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value MMBT2222 MMBT2222A 60 75 30 40 56 600 200 150 -55 to +150 Unit V V V mA mW OC OC SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 15/03/2006 MMBT2222 / MMBT2222A Characteristics at Ta = 25 OC Parameter DC Current Gain at VCE = 10 V, IC = 0.
1 mA at VCE = 10 V, IC = 1 mA at VCE = 10 V, IC = 10 mA at VCE = 1 V, IC = 150 mA at VCE = 10 V, IC = 150 mA at VCE = 10 V, IC = 500 mA MMBT2222 MMBT2222A Collector Base Voltage at IC = 10 µA Collector Emitter Voltage at IC = 10 mA Emitter Base Voltage at IE = 10 µA Collector Base Cutoff Current at VCB = 50 V at VCB = 60 V Emitter Base Cutoff Current at VEB = 3 V Collector Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A MMBT2222 MMBT2222A Base Emitter Saturation Voltage at IC = 150 mA, IB = 15 mA at IC = 500 mA, IB = 50 mA MMBT2222 MMBT2222A MMBT2222 MMBT2222A Transition Frequency at VCE = 20 V, -IE = 20 mA, f = 100 MHz Collector Output Capacitance at VCB = 10 V, f = 100 KHz Emitter Input Capacitance at VEB = 0.
5 V, f = 100 KHz Delay Time at VCC = 30 V, VBE(OFF) = 0.
5 V, IC = 150 mA, IB1 = 15 mA Rise Time at VCC = 30 V, VBE(OFF) = 0.
5 V, IC = 150 mA, IB1 = 15 mA Storage Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA Fall Time at VCC = 30 V, IC = 150 mA, IB1 = -IB2 = 15 mA Symbol hFE hFE hFE hFE hFE hFE hFE VCBO VCEO VEBO ICBO IEBO VCE(sat) VBE(sat) fT Cob Cib td tr tstg tf Min.
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