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D1069

INCHANGE
Part Number D1069
Manufacturer INCHANGE
Description Silicon NPN Power Transistor
Published May 16, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1069 DESCRIPTION ·High Collector ...
Datasheet PDF File D1069 PDF File

D1069
D1069

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1069 DESCRIPTION ·High Collector Current Capability ·High Collector Power Dissipation Capability ·Built-in Damper Diode APPLICATIONS ·TV horizontal deflection output applications.
·High voltage switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6V IC Collector Current-Continuous 7A ICM Collector Current-Peak 15 A IBB Base Current-Continuous Collector Power Dissipation Ta=25℃ PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Ttemperature Range 2A 1.
75 W 40 150 ℃ -55~150 ℃ isc Website：www.
iscsemi.
cn INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2SD1069 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; L= 50mH V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.
1A; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB=B 0.
5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB=B 0.
5A ICES Collector Cutoff Current VCE= 250V; VBE= 0 hFE DC Current Gain IC= 5A ; VCE= 1.
5V fT Current-Gain—Bandwidth Product IC= 0.
2A; VCE= 10V VECF C-E Diode Forward Voltage IF= 6A tf Fall Time ICP= 5A; IB1(end)= 0.
5A MIN TYP.
MAX UNIT 150 V 300 V 6V 1.
5 V 1.
5 V 1 mA 10 18 MHz 1.
8 V 1.
0 μs isc Website：www.
iscsemi.
cn ...


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