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RB551V-30

SEMTECH
Part Number RB551V-30
Manufacturer SEMTECH
Description SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE
Published May 18, 2016
Detailed Description RB551V-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Ultra low VF • High ...
Datasheet PDF File RB551V-30 PDF File

RB551V-30
RB551V-30

Overview
RB551V-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE Features • Small surface mounting type • Ultra low VF • High reliability Applications • High frequency rectification switching regulation PINNING PIN 1 2 DESCRIPTION Cathode Anode 12 SA Top View Marking Code: "SA" Simplified outline SOD-323 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Peak Reverse Voltage DC Reverse Voltage Mean Rectifying Current Peak Forward Surge Current (60 Hz for 1 Cyc.
) Junction Temperature Storage Temperature Range Characteristics at Ta = 25 OC Parameter Forward Voltage at IF = 100 mA at IF = 500 mA Reverse Current at VR = 20 V Note: ESD sensitive product handling required.
Symbol VRM VR IO IFSM Tj Ts Value 30 20 0.
5 2 125 - 40 to + 125 Unit V V A A OC OC Symbol VF IR Max.
0.
36 0.
47 100 Unit V µA SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 01/09/2006 RB551V-30 SE...


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