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A1162

Toshiba Semiconductor
Part Number A1162
Manufacturer Toshiba Semiconductor
Description 2SA1162
Published May 23, 2016
Detailed Description 2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier ...
Datasheet PDF File A1162 PDF File

A1162
A1162

Overview
2SA1162 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1162 Audio Frequency General Purpose Amplifier Applications • High voltage and high current: VCEO = −50 V, IC = −150 mA (max) • Excellent hFE linearity: hFE (IC = −0.
1 mA)/hFE (IC = −2 mA) = 0.
95 (typ.
) • High hFE: hFE = 70~400 • Low noise: NF = 1dB (typ.
), 10dB (max) • Complementary to 2SC2712 • Small package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −50 V Collector-emitter voltage VCEO −50 V Emitter-base voltage VEBO −5 V Collector current IC −150 mA Base current IB −30 mA Collector power dissipation PC 150 mW Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C JEDEC JEITA TO-236MOD SC-59 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in TOSHIBA 2-3F1A temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
Weight: 0.
012 g (typ.
) operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol Test Condition ICBO IEBO VCB = −50 V, IE = 0 VEB = −5 V, IC = 0 hFE (Note) VCE = −6 V, IC = −2 mA VCE (sat) IC = −100 mA, IB = −10 mA fT VCE = −10 V, IC = −1 mA Cob VCB = −10 V, IE = 0, f = 1 MHz NF VCE = −6 V, IC = −0.
1 mA, f = 1 kHz, Rg = 10 kΩ, Min Typ.
Max Unit ⎯ ⎯ −0.
1 μA ⎯ ⎯ −0.
1 μA 70 ⎯ 400 ⎯ −0.
1 −0.
3 V 80 ⎯ ⎯ MH...


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