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2SD1351

Part Number	2SD1351
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistors
Published	May 25, 2016
Detailed Description	isc Silicon NPN Power Transistor 2SD1351 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Colle...
Datasheet	2SD1351 PDF File

Overview

isc Silicon NPN Power Transistor 2SD1351 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ (IC= 2A, IB= 0.
2A) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=2...

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