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1SS412

Toshiba
Part Number 1SS412
Manufacturer Toshiba
Description Silicon Diode
Published May 28, 2016
Detailed Description TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forwa...
Datasheet PDF File 1SS412 PDF File

1SS412
1SS412

Overview
TOSHIBA Diode Silicon Epitaxial Planar Type 1SS412 General-Purpose Rectifier Applications 1SS412 Unit: imm z Low forward voltage z Low reverse current z Small total capacitance z Small package : VF = 1.
0 V (typ.
) : IR = 0.
1 nA (typ.
) : CT = 3.
0 pF (typ.
) : SC-70 Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 85 V Reverse voltage VR 80 V Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation IFM IO IFSM P 300 * 100 * 1* 100 mA mA A mW Junction temperature Storage temperature range Tj 150 °C JEDEC Tstg −55 to 150 °C JEITA ― SC-70 Note: Using continuously under heavy loads (e.
...


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