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1SS423

Toshiba
Part Number 1SS423
Manufacturer Toshiba
Description Silicon Diode
Published May 28, 2016
Detailed Description TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications • Small package • L...
Datasheet PDF File 1SS423 PDF File

1SS423
1SS423

Overview
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS423 Ultra-High-Speed Switching Applications • Small package • Low forward voltage: VF (3) = 0.
56 V (typ.
) • Low reverse current: IR = 5 μA (max) 1SS423 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse voltage VRM 45 V Reverse voltage Maximum (peak) forward current Average forward current Surge current (10 ms) Power dissipation VR IFM IO IFSM P 40 200* 100* 1* 100* V mA mA A mW 1.
ANODE1 2.
CATHODE2 3.
CATHODE1 ANODE2 Junction temperature Tj 125 °C JEDEC ― Storage temperature range Tstg −55~125 °C JEITA ― Operating temperature range Topr −40~100 °C Note: Using...


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