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2SA1080

Part Number	2SA1080
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Jun 18, 2016
Detailed Description	isc Silicon PNP Power Transistor 2SA1080 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.) ·Goo...
Datasheet	2SA1080 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1080 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -40V(Min.
) ·Good Linearity of hFE ·Complement to Type 2SC2530 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature -0.
5 A 20 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.
iscsemi.
com 1 isc &...

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