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2N3904

KEC
Part Number 2N3904
Manufacturer KEC
Description EPITAXIAL PLANAR NPN TRANSISTOR
Published Jun 21, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. 2N3904 EPITAXIAL PLANAR NPN TRANSISTOR...
Datasheet PDF File 2N3904 PDF File

2N3904
2N3904

Overview
SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
2N3904 EPITAXIAL PLANAR NPN TRANSISTOR FEATURES Low Leakage Current : ICEX=50nA(Max.
), IBL=50nA(Max.
) @VCE=30V, VEB=3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage : VCE(sat)=0.
3V(Max.
) @IC=50mA, IB=5mA.
Low Collector Output Capacitance : Cob=4pF(Max.
) @VCB=5V.
Complementary to 2N3906.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current VCBO VCEO VEBO IC IB Collector Power Dissipation Ta=25 Tc=25 *PC Junction Temperature Storage Temperature Range *Cu Lead-Frame : 625mW(@Ta=25 ) 1.
5W(@Tc=25 ) Fe Lead-Frame : 400mW(@Ta=25 ) 1.
0W(@Tc=25 ) Tj Tstg RATING 60 40 6 200 50 625 400 1.
5 1.
0 150 -55 150 UNIT V V V mA mA mW W 2013.
7.
08 Revision No : 2 1/4 2N3904 ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Collector Cut-off Current Base Cut-off Current Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage * Emitter-Base Breakdown Voltage DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Transition Frequency Collector Output Capacitance Input Capacitance Input Impedance Voltage Feedback Ratio Small-Signal Current Gain Collector Output Admittance Noise Figure * ICEX IBL V(BR)CBO V(BR)CEO V(BR)EBO hFE(1) hFE(2) hFE(3) hFE(4) hFE(5) VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 fT Cob Cib hie hre hfe hoe NF VCE=30V, VEB=3V VCE=30V, VEB=3V IC=10 A, IE=0 IC=1mA, IB=0 IE=10 A, IC=0 VCE=1V, IC=0.
1mA VCE=1V, IC=1mA VCE=1V, IC=10mA VCE=1V, IC=50mA VCE=1V, IC=100mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA IC=50mA, IB=5mA VCE=20V, IC=10mA, f=100MHz VCB=5V, IE=0, f=1MHz VBE=0.
5V, IC=0, f=1MHz VCE=10V, IC=1mA, f=1kHz VCE=5V, IC=0.
1mA Rg=1k , f=10Hz 15.
7kHz Delay Time td Switching Time Rise Time Storage Time tr tstg Fall Time tf * Pulse Test : Pulse Width 300 S, Duty Cycle 2%.
MIN.
...


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