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2N3906S

Part Number	2N3906S
Manufacturer	KEC
Description	EPITAXIAL PLANAR PNP TRANSISTOR
Published	Jun 21, 2016
Detailed Description	SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50...
Datasheet	2N3906S PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50nA(Max.
), IBL=-50nA(Max.
) @VCE=-30V, VEB=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage : VCE(sat)=-0.
4V(Max.
) @IC=-50mA, IB=-5mA.
Low Collector Output Capacitance : Cob=4.
5pF(Max.
) @VCB=-5V.
Complementary to 2N3904S.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -40 Collector-Emitter Voltage VCEO -40 Emitter-Base Voltage VEBO -5 Collector Current IC -200 Base Current IB -50 Collector Power Dissipation PC * 350 Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 Note : * Package Mount...

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