DatasheetsPDF.com

MJE13005DC

KEC
Part Number MJE13005DC
Manufacturer KEC
Description TRIPLE DIFFUSED NPN TRANSISTOR
Published Jun 22, 2016
Detailed Description SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION. Built-in Free wheeling Diode makes effic...
Datasheet PDF File MJE13005DC PDF File

MJE13005DC
MJE13005DC

Overview
SEMICONDUCTOR TECHNICAL DATA HIGH VOLTAGE HIGH SPEED POWER SWITCH APPLICATION.
Built-in Free wheeling Diode makes efficient anti saturation operation.
Suitable for half bridge light ballast Applications.
Low base drive requirement.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Pulse Base Current Collector Power Dissipation (Tc=25 ) Junction Temperature Storage Temperature Range VCBO VCEO VEBO IC ICP IB PC Tj Tstg 700 400 10 5 10 2 75 150 -55 150 V V V A A W MJE13005DC TRIPLE DIFFUSED NPN TRANSISTOR ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Emitter Cut-off Current DC Current Gain IEBO hFE(1) hFE(2) Collector-Emitter Saturation Voltage VCE(sat) Base-Emitter Saturation Voltage Collector Output Capacitance Transition Frequency Turn-On Time VBE(sat) Cob fT ton TEST CONDITION VEB=9V, IC=0 VCE=5V, IC=1A VCE=5V, IC=2A IC=1A, IB=0.
2A IC=2A, IB=0.
5A IC=4A, IB=1A IC=1A, IB=0.
2A IC=2A, IB=0.
5A VCB=10V, f=1MHz VCE=10V, IC=0.
5A Storage Time tstg Fall Time Diode Forward Voltage tf VF *Reverse recovery tims (di/dt=10A/ S) trr *Pulse Test : Pulse Width = 5mS, Duty cycles 10% IF=2A IF=0.
4A IF=1A IF=2A 2015.
6.
09 Revision No : 1 MIN.
23 8 4 TYP.
65 - MAX.
10 35 0.
5 0.
6 1 1.
2 1.
6 - UNIT A V V pF MHz - - 0.
15 S 2-5 S - - 0.
8 S - - 1.
6 V - 800 - nS - 1.
4 - S - 1.
9 - S 1/4 MJE13005DC 2015.
6.
09 Revision No : 1 2/4 MJE13005DC 2015.
6.
09 Revision No : 1 3/4 MJE13005DC REVERSE BIASED SAFE OPERATING AREA TEST CIRCUITS For inductive loads, high voltage and high current must be sustained simultaneously during turn-off, in most cases, with the base to emitter junction reverse biased.
Under these conditions the collector voltage must be held to a safe level at or below a specific value of collector current.
This can be accomplished by several means such as active clamping, RC snubbing, load line shaping, etc.
The s...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)