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2SA1009

Part Number	2SA1009
Manufacturer	Inchange Semiconductor
Description	Silicon PNP Power Transistor
Published	Jun 22, 2016
Detailed Description	isc Silicon PNP Power Transistor 2SA1009 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1V(Max.)@ IC= -0....
Datasheet	2SA1009 PDF File

Overview

isc Silicon PNP Power Transistor 2SA1009 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -1V(Max.
)@ IC= -0.
3A ·Fast Switching Speed ·Wide Reverse Bias Safe Operating Area ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for switching regulators, DC/DC converters and High frequency power amplifier application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -350 V VCEO Collector-Emitter Voltage -350 V VEBO Emitter-Base Voltage -7.
0 V IC Collector Current-Continuous -2.
0 A ICM Collector Current-Peak -4.
0 A PC Collector Power Dissipatio...

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