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2SC4226

Part Number	2SC4226
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Transistor
Published	Jun 23, 2016
Detailed Description	isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4226 DESCRIPTION ·Low Collector Curren -IC= 0.1A ·Low Colle...
Datasheet	2SC4226 PDF File

Overview

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC4226 DESCRIPTION ·Low Collector Curren -IC= 0.
1A ·Low Collector Power—Pc=0.
1W With SOT-323 Package ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for broadband low noise amplifier ; wideband low noise amplifie ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 3 V IC Collector Current-Continuous Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 100 mA 100 mW 150 ℃ Tstg Storage Temperature Range -65--150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCBO Collector-Base Voltage IC= 1uA,Ib=0 ICBO Collector Cutoff Current VCB= 10V:IE= 0 IEBO Emitter Cutoff Current ...

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