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2SC4228

Part Number	2SC4228
Manufacturer	Inchange Semiconductor
Description	Silicon NPN RF Transistor
Published	Jun 24, 2016
Detailed Description	isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4228 DESCRIPTION ·High fT 8.0GHz TYP. @VCE = 3 V, IC = 5 mA, f...
Datasheet	2SC4228 PDF File

Overview

isc Silicon NPN RF Transistor INCHANGE Semiconductor 2SC4228 DESCRIPTION ·High fT 8.
0GHz TYP.
@VCE = 3 V, IC = 5 mA, f = 2 GHz ·Low Cre 0.
3pF TYP.
, @VCB = 3 V, IE = 0, f = 1 MHz ·High ︱S21e︱2 7.
5 dB TYP.
@VCE = 3 V, IC = 5 mA, f = 2 GHz ·100% tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for VHF, UHF low noise amplifier.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 20 V VCEO Collector-Emitter Voltage 10 V VEBO Emitter-Base Voltage 1.
5 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 35 mA 0.
15 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN RF Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 10V; IE= 0 IEBO Emitter Cu...

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