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2SD1338

Inchange Semiconductor
Part Number 2SD1338
Manufacturer Inchange Semiconductor
Description Silicon NPN Transistor
Published Jun 24, 2016
Detailed Description isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-...
Datasheet PDF File 2SD1338 PDF File

2SD1338
2SD1338

Overview
isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Built-in Damper Diode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for horizontal output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current- Continuous 2.
5 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC= 25℃ TJ Junction Temperature 8 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1338 isc website：www.
iscsemi...


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