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BDW36

Inchange Semiconductor
Part Number BDW36
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Jun 26, 2016
Detailed Description isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 180V(Min) ·High Switc...
Datasheet PDF File BDW36 PDF File

BDW36
BDW36

Overview
isc Silicon NPN Power Transistors DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 180V(Min) ·High Switching Speed ·Low Collector Saturation Voltage- : VCE(sat)= 1.
0V(Max)@ IC= 10A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in industrial-military power amplifier and switching circuit applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 30 A ICM Collector Current-Peak 50 A IB Base Current-Continuous 10 A PC Collector Power @TC=25℃ Dissipation 250 W TJ Junction Temperature 200 ℃ Tstg Storage Temperature -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 0.
875 ℃/W BDW36 isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc Silicon...


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