DatasheetsPDF.com

2SK858

Part Number	2SK858
Manufacturer	Inchange Semiconductor
Description	N-Channel MOSFET Transistor
Published	Jun 27, 2016
Detailed Description	isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Mini...
Datasheet	2SK858 PDF File

Overview

isc N-Channel MOSFET Transistor DESCRIPTION ·Drain Current –ID=2A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 2 A Ptot Total Dissipation@TC=25℃ 40 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL ...

Similar Datasheet

2SK800 N-Channel MOSFET - NEC
2SK801 MOSFET - NEC
2SK802 N-Channel MOSFET - NEC
2SK803 N-Channel MOSFET Transistor - Inchange Semiconductor
2SK804 N-Channel MOSFET Transistor - Inchange Semiconductor
2SK805 N-Channel MOSFET Transistor - Inchange Semiconductor
2SK805 Silicon N-Channel Power F-MOS FET - Matsushita Electric
2SK806 N-Channel MOSFET Transistor - Inchange Semiconductor
2SK806 Silicon N-channel Power F-MOS FET - Panasonic
2SK807 N-Channel MOSFET Transistor - Inchange Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)