DatasheetsPDF.com

MMBD4448HTC

JCET
Part Number MMBD4448HTC
Manufacturer JCET
Description SWITCHING DIODE
Published Jul 5, 2016
Detailed Description JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate Diode MMBD4448HT/HTA/HTC/HTS SWITCHING D...
Datasheet PDF File MMBD4448HTC PDF File

MMBD4448HTC
MMBD4448HTC

Overview
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.
, LTD SOT-523 Plastic-Encapsulate Diode MMBD4448HT/HTA/HTC/HTS SWITCHING DIODE FEATURES z Fast Switching Speed z For General Purpose Switching Applications z High Conductance MMBD4448HT MMBD4448HTA MMBD4448HTC MMBD4448HTS SOT-523 MARKING:A MARKING:A6 A3 A6 MARKING:A7 A7 A7 MARKING:AB AB AB Solid dot = Green molding compound device, if none,the normal device.
Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25 ℃ Parameter Symbol Limit Non-Repetitive Peak Reverse Voltage VRM 100 Peak Repetitive Peak Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 80 DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 57 Forward Continuous Current IFM 500 Average Rectified Output Current IO 250 Non-Repetitive Peak Forward Surge Current @t=8.
3ms IFSM 2.
0 Power Dissipation Thermal Resistance from Junction to Ambient Storage Temperature Electrical Ratings @Ta=25℃ Parameter Symbol Pd RθJA TSTG Min Typ 150 833 -55 ~+150 Max Unit Unit V V V mA mA A mW ℃/W ℃ Conditions Reverse breakdown voltage Forward voltage Reverse current Capacitance between terminals Reverse recovery time VR 80 VF1 0.
62 VF2 VF3 VF4 IR1 IR2 CT trr 0.
72 0.
855 1.
0 1.
25 0.
1 25 3.
5 4 V V V V V μA nA pF ns IR=2.
5 μA IF=5mA IF=10mA IF=100mA IF=150mA VR=70V VR=20V VR=6V,f=1MHz IF=IR=10mA Irr=0.
1XIR,RL=100Ω www.
cj-elec.
com 1 C,Nov,2014 REVERSE CURRENT I (nA) R FORWARD CURRENT I (mA) F T a =100℃ Typical Characteristics Forward Characteristics 500 100 10 1 T a =25℃ 10000 1000 100 10 Reverse Characteristics T =100℃ a T =25℃ a 0.
1 0.
0 0.
4 0.
8 1.
2 FORWARD VOLTAGE V (V) F 1.
6 1 0 20 40 60 80 REVERSE VOLTAGE V (V) R CAPACITANCE BETWEEN TERMINALS C (pF) T POWER DISSIPATION P (mW) D Capacitance Characteristics 1.
6 T =25℃ a f=1MHz 1.
4 1.
2 1.
0 0.
8 0.
6 0 4 8 12 16 20 REVERSE VOLTAGE V (V) R Power Derating Curve 200 150 100 50 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE T (℃) a www.
cj-elec.
com 2 C,Nov,2014 SOT...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)