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BAS70W

Philips
Part Number BAS70W
Manufacturer Philips
Description Schottky barrier (double) diodes
Published Jul 8, 2016
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D102 BAS70W series Schottky barrier (double) diodes Product specific...
Datasheet PDF File BAS70W PDF File

BAS70W
BAS70W

Overview
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D102 BAS70W series Schottky barrier (double) diodes Product specification Supersedes data of 1996 Mar 19 1999 Mar 26 Philips Semiconductors Schottky barrier (double) diodes Product specification BAS70W series FEATURES • Low forward voltage • High breakdown voltage • Guard ring protected • Very small SMD package • Low capacitance.
APPLICATIONS • Ultra high-speed switching • Voltage clamping • Protection circuits • Blocking diodes.
PINNING BAS70 PIN W -04W -05W -06W 1 a1 a1 a1 k1 2 n.
c.
k2 a2 k2 3 k1 k1, a2 k1, k2 a1, a2 handbook, 2 columns 3 DESCRIPTION Planar Schottky barrier diodes.
Single diodes (BAS70W) and double diodes with different pinning (BAS70-04W; -05W; -06W) are available.
The diodes are encapsulated in a SOT323 very small plastic SMD package.
1 Top view 2 MBC870 Fig.
1 Simplified outline (SOT323) and pin configuration.
MARKING TYPE NUMBER BAS70W BAS70-04W BAS70-05W BAS70-06W MARKING CODE(1) 73∗ 74∗ 75∗ 76∗ Note 1.
∗ = -: Made in Hong Kong.
∗ = t: Made in Malaysia.
3 12 n.
c.
MLC357 Fig.
2 BAS70W single diode configuration (symbol).
3 12 MLC358 Fig.
3 BAS70-04W diode configuration (symbol).
3 12 MLC359 Fig.
4 BAS70-05W diode configuration (symbol).
3 12 MLC360 Fig.
5 BAS70-06W diode configuration (symbol).
1999 Mar 26 2 Philips Semiconductors Schottky barrier (double) diodes Product specification BAS70W series LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS Per diode VR IF IFRM IFSM Tstg Tj Tamb continuous reverse voltage continuous forward current repetitive peak forward current non-repetitive peak forward current storage temperature junction temperature operating ambient temperature tp ≤ 1 s; δ ≤ 0.
5 tp < 10 ms MIN.
MAX.
UNIT − 70 V − 70 mA − 70 mA − 100 mA −65 +150 °C − 150 °C −65 +150 °C ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER Per diode VF forward voltage IR reverse cur...


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