DatasheetsPDF.com

1N80

UTC
Part Number 1N80
Manufacturer UTC
Description N-CHANNEL POWER MOSFET
Published Jul 15, 2016
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 1N80 1A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N80 is an N-channel mode powe...
Datasheet PDF File 1N80 PDF File

1N80
1N80

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 1N80 1A, 800V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 1N80 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costomers with planar stripe and DMOS technology.
This technology specializes in allowing a minimum on-state resistance and superior switching performance.
It also can withstand high energy pulse in the avalanche and commutation mode.
The UTC 1N80 is universally applied in high efficiency switch mode power supply.
„ FEATURES * RDS(on)=13.
5Ω @VGS =10V * High switching speed * Improved dv/dt capability * 100% avalanche tested „ SYMBOL Power MOSFET „ ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 1N80L-TA3-T 1N80G-TA3-T 1N80L-TF3-T 1N80G-TF3-T 1N80L-TF1-T 1N80G-TF1-T 1N80L-TM3-T 1N80G-TM3-T 1N80L-TN3-T 1N80G-TN3-T 1N80L-TN3-R 1N80G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-220 TO-220F TO-220F1 TO-251 TO-252 TO-252 Pin Assignment 1 2 3 G D S G D S G D S G D S G D S G D S Packing Tube Tube Tube Tube Tube Tape Reel www.
unisonic.
com.
tw Copyright © 2012 Unisonic Technologies Co.
, Ltd 1 of 6 QW-R502-491.
E 1N80 Power MOSFET „ ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 800 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 1) IAR 1.
0 A Drain Current Continuous ID Pulsed (Note 1) IDM 1.
0 A 4.
0 A Single Pulsed (Note 2) Avalanche Energy EAS Repetitive (Note 1) EAR 90 mJ 4.
5 mJ Peak Diode Recovery dv/dt (Note 3) dv/dt 4.
0 V/ns TO-220 39 Power Dissipation TO-220F/TO-220F1 PD 23 W TO-251/TO-252 27 Junction Temperature TJ +150 °C Storage Temperature TSTG -55~+150 °C Note: 1.
Repetitive Rating: Pulse width limited by maximum junction temperature 2.
L=170mH, IAS=1.
0A, VDD= 50V, RG=25Ω, Starting TJ=25°C 3.
ISD ≤1.
0A, di/dt ≤200A/μs, VDD ≤BVDSS, Starting TJ=25°C 4.
Absolute maximum ratings are those v...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)