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CLY2

Part Number	CLY2
Manufacturer	Siemens Semiconductor Group
Description	GaAs FET (Power amplifier for mobile phones For frequencies up to 3 GHz)
Published	Mar 23, 2005
Detailed Description	GaAs FET CLY 2 _______________________________________________________________________________________________________...
Datasheet	CLY2 PDF File

Overview

GaAs FET CLY 2 ________________________________________________________________________________________________________ Datasheet * Power amplifier for mobile phones * For frequencies up to 3 GHz * Operating voltage range: 2 to 6 V * POUT at VD=3V, f=1.
8GHz typ.
23.
5 dBm * High efficiency better 55 % 4 5 6 3 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! 1 Type Marking Ordering code (taped) Q62702-L96 .
1 2 S Pin Configuration 3 4 5 D D S Package 1) 6 G MW 6 CLY 2 Y2 G Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature Total power dissipation (TS < 50°C) 2) Thermal Resistance Channel-soldering point 2) Symbol VDS VDG VGS ID TCh Tstg Ptot 9 12 -6 600 150 -55.
.
.
+150 900 Unit V V V mA °C °C mW RthChS ≤110 K/W 1) Dimensions see chapter Package Outlines 2) TS is measured on the source lead at the soldering point to the pcb.
Siemens Aktiengesellschaft pg.
1/77 17.
12.
96 HL EH PD 21 GaAs FET Electrical characteristics (TA = 25°C , unless otherwise specified) Characteristics Drain-source saturation current VDS = 3 V VGS = 0 V CLY 2 ________________________________________________________________________________________________________ Symbol min 300 -3.
8 - typ 450 5 5 -2.
8 15.
5 max 650 50 20 -1.
8 - Unit mA µA µA V dB IDSS ID(p) IG(p) VGS(p) Drain-source pinch-off current VDS = 3 V VGS = -3.
8 V Gate pinch-off current VDS = 3 V VGS = -3.
8 V Pinch-off Voltage VDS = 3 V ID = 50 µA * Small Signal Gain ) VDS = 3 V ID = 180 mA Pin = -5 dBm f = 1.
8 GHz G Small Signal Gain **) VDS = 3 V ID = 180 mA Pin = -5 dBm f = 1.
8 GHz G - 14.
5 - dB Output Power VDS = 3V Pin = 10 dBm Po 22.
5 23.
5 dBm ID = 180 mA f = 1.
8 GHz 1dB-Compression Point VDS = 3 V ID = 180 mA f = 1.
8 GHz P1dB - 23.
5 - dBm 1dB-Compression Point VDS = 5 V ID = 180 mA f = 1.
8 GHz P1dB - 27.
0 - dBm Power Added Efficiency VDS = 3V Pin = 10 dBm * PAE f...

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