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20N45

Inchange Semiconductor
Part Number 20N45
Manufacturer Inchange Semiconductor
Description N-Channel MOSFET
Published Jul 24, 2016
Detailed Description INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N45 ·FEATURES ·Drain Current ID= 20...
Datasheet PDF File 20N45 PDF File

20N45
20N45


Overview
INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N45 ·FEATURES ·Drain Current ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 450V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.
27Ω(Max) ·Fast Switching ·APPLICATIONS ·Switch mode power supply.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous 450 ±30 V V ID Drain Current-Continuous 20 A PD Total Dissipation @TC=25℃ 150 W Tj Max.
Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 1.
25 ℃/W isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn INCHANGE Semiconductor isc N-Channel MOSFET Transistor isc Product Specification 20N45 ·ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VSD Diode Forward On-voltage RDS(on) Drain-Source On-Resistance IGSS Gate-Body Leakage Current IDSS Zero Gate Voltage Drain Current Ciss Input Capacitance Crss Reverse Transfer capacitance Coss Output Capacitance CONDITIONS VGS= 0; ID=250µA VDS= VGE; ID=250µA IS= 20A ;VGS= 0 VGS= 10V; ID= 10A VGS= ±30V;VDS= 0 VDS=400V; VGS= 0 VDS=25V; VGS=0V; fT=1MHz MIN TYPE MAX UNIT 450 V 2.
0 4.
5 V 1.
5 V 0.
27 Ω ±100 nA 250 µA 950 60 pF 150 · isc website：www.
iscsemi.
cn 2 isc & iscsemi is registered trademark PDF pdfFactory Pro www.
fineprint.
cn ...


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