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TS820

HAOPIN
Part Number TS820
Manufacturer HAOPIN
Description SCRs
Published Jul 25, 2016
Detailed Description TM HPM HAOPIN MICROELECTRONICS CO.,LTD. TS820 SCRs Description Glass passivated, sensitive gate thyristors in a plasti...
Datasheet PDF File TS820 PDF File

TS820
TS820


Overview
TM HPM HAOPIN MICROELECTRONICS CO.
,LTD.
TS820 SCRs Description Glass passivated, sensitive gate thyristors in a plastic envelope, intended for use in general purpose switching and phase control applications.
These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
Symbol Simplified outline ak g 1 2 3 TO-220 Pin Description 1 Cathode 2 Anode 3 Gate Applications: Motor control Industrial and domestic lighting Heating Static switching Features Blocking voltage to 800 V On-state RMS current to 8 A Ultra low gate trigger current SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT RMS RMS on-state current ITSM Non-repetitive peak on-state current 600T 800T Value 600 800 8 73 Unit V A A SYMBOL Rth j-c PARAMETER Junction to case (DC) Rth j-a Junction to ambient (DC) Value 20 70 UNIT /W /W http://www.
haopin.
com 1/5 TM HPM HAOPIN MICROELECTRONICS CO.
,LTD.
TS820 SCRs Limiting values in accordance with the Maximum system(IEC 134) SYMBOL PARAMETER V VDRM RRM IT(RMS) I T ( AV ) ITSM I2t Repetitive peak off-state Voltages RMS on-state current Average on-state current Non-repetitive peak on-state current I2t for fusing CONDITIONS all conduction angles Half sine wave;<=111 half sine wave; Tj = 25 prior to surge T=10ms 600T 800T t=10ms t=8.
3ms Tj=25 MIN - - DIT/dt IGM VRGM PGM P G(AV) Tstg Tj Critical rate of rise of on-state current IG=2*IGT, tr Peak gate current Tp=20 s Peak reverse gate voltage 100ns F=60Hz Tj=125 Tj=125 Peak gate power Average gate power Over any 20 ms period Storage temperature Operating junction Temperature - - -40 - MAX 600 800 8 5 70 73 24.
5 50 4 5 5 1 150 1252 UNIT V A A A A A2S A/ s A V W W TJ=25OC unless otherwise stated SYMBOL PARAMETER Static characteristics IGT Gate trigger current CONDITIONS VD=12V; RL=140 VGT Gate trigger voltage VD=12V; RL=140 VGD VD=V ;DRM RL=3.
3K RGK=220 IL Latching current IG=1mA,R...


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