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1SS406

Part Number	1SS406
Manufacturer	Toshiba
Description	Schottky Barrier Diode
Published	Aug 1, 2016
Detailed Description	TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application 1SS406 Unit: mm z Low fo...
Datasheet	1SS406 PDF File

Overview

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS406 High Speed Switching Application 1SS406 Unit: mm z Low forward voltage z Low reverse current z Small total capacitance : VF (3) = 0.
50V (typ.
) : IR= 0.
5μA (max) : CT = 3.
9pF (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Maximum (peak) reverse Voltage VRM 25 V Reverse voltage VR 20 V Maximum (peak) forward current IFM 100 mA Average forward current Surge current (10ms) Power dissipation IO IFSM P* 50 mA 1A 200 mW USC Junction temperature Tj 125 °C Storage temperature range Tstg −55 to 125 °C JEDEC ― Note: Using continuously under heavy loads (e.
g.
the application of high temper...

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