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DB3

Fairchild Semiconductor
Part Number DB3
Manufacturer Fairchild Semiconductor
Description 150mW Bi-directional Trigger Diodes
Published Aug 2, 2016
Detailed Description DB3-DB3TG — 150mW Bi-directional Trigger Diodes DB3-DB3TG 150mW Bi-directional Trigger Diodes Features • VBO : 32V Vers...
Datasheet PDF File DB3 PDF File

DB3
DB3


Overview
DB3-DB3TG — 150mW Bi-directional Trigger Diodes DB3-DB3TG 150mW Bi-directional Trigger Diodes Features • VBO : 32V Version • Low break-over current • DO-35 package (JEDEC) • Hermetically sealed glass • Compression bonded construction • All external surfaces are corrosion resistant and terminals are readily solderable • RoHS compliant • High reliability glass passivation insuring parameter stability and protection against junction contamination.
• Terminal: Pure tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed • High temperature soldering guaranteed : 260°C/10 seconds September 2010 DO-35 Color Band Denotes Cathode Absolute Maximum Ratings and Electrical Characteristics Symbol Parameter VBO ±VBO IBO ΔV IB VO PD IFRM Rθja TJ, TSTG Break-over Voltage @ C=22nF Min.
Typ.
Max.
Break-over Voltage Symmetry @ C=22nF Max.
Break-over Current @ C=22nF Max.
Dynamic Break-over Voltage @ IBO to IF=10mA Min.
Leakage Current @ VB=0.
5VBO(Max.
) Max.
Output Voltage *see diagram 1 Min.
Power Dissipation Repetitive Peak Forward Current, Pulse Width=20μsec Typical Thermal Resistance, Junction to Ambient (Note1) Junction and Storage Temperature Range Value DB3 DB3TG 28 30 32 32 36 34 ±3 ±2 100 15 59 10 5 150 2 400 -40 to +125 * Rating at 25°C ambient temperature unless otherwise specified.
* Notes: 1.
Valid provided that electrodes are kept at ambient temperature Units V V V V μA V μA V mW A °C/W °C © 2010 Fairchild Semiconductor Corporation DB3-DB3TG Rev.
A1 1 www.
fairchildsemi.
com DB3-DB3TG — 150mW Bi-directional Trigger Diodes Typical Performance Characteristics IF=10m IBO IB VB=0.
5*VBO ǻV VF VBO VBO : Break-Over Voltage IBO : Break-Over Current ǻV : Dynamic Breakover Voltage IB : Leakage Current at VB=0.
5*VBO VF : Voltage at Current IF=10mA Diagram 1 : Test circuit Power Dissipation (mW) Figure 1.
Admissible Power Dissipation Curve 160 120 80 40 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 Ambient Tempeatatu...



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