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DB3

Taiwan Semiconductor
Part Number DB3
Manufacturer Taiwan Semiconductor
Description 150mW Bi-directional Trigger Diode
Published Aug 2, 2016
Detailed Description Small Signal Diode DB3-DB3TG 150mW Bi-directional Trigger Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features —D...
Datasheet PDF File DB3 PDF File

DB3
DB3

Overview
Small Signal Diode DB3-DB3TG 150mW Bi-directional Trigger Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS Features —Designed for through-Hole Device Type Mounting.
—Hermetically Sealed Glass.
—All external suface are corrosion resistant and terminals are readily solderable.
—High reliability glass passivation insuring parameter stability and protection against junction contamination.
—Pb free version and RoHS compliant Mechanical Data —Case :DO-35 Solder Hot Dip Tin (Sn) lead finish —Terminal: Pure tin plated, lead free.
, solderable per MIL-STD-202, Method 208 guaranteed —High temperature soldering guaranteed: 260°C/10s —Marking : DB3/DB3TG —Weight : 0.
1255 gram (approximately) D A B C Dimensions A B C D Unit (mm) Unit (inch) Min 0.
45 3.
05 25.
4 1.
53 Max 0.
55 5.
08 38.
1 2.
28 Min 0.
018 0.
120 1.
000 0.
060 Max 0.
022 0.
200 1.
500 0.
090 Ordering Information Part No.
DB3/DB3TG RI Package DO-35 Packing 5Kpcs / 10" Reel Maximum Ratings and Electrical Characteristics Rating at 25°C ambient temperature unless otherwise specified.
Maximum Ratings Type Number Power Dissipation Repetitive Peak Forward Current Pulse Width= 20μsec Thermal Resistance (Junction to Ambient) (Note 1) Junction and Storage Temperature Range Symbol PD IFRM RθJA TJ, TSTG Value 150 2 400 -40 to + 125 Units mW A °C/W °C Electrical Characteristics Type Number Break-over Voltage Break-over Voltage Symmetry Break-over Current Maxiumn Leakage Current Junction Capacitance Output Voltage Reverse Recovery Time C= 22nF C= 22nF C= 22nF VR= 0.
5V VR=0, f=1.
0MHz (Note2) Symbol VBO + / -VBO IBO IR CJ VO Trr DB3 32 +/-3 100 DB3TG 32 +/-2 15 10 22.
0 5 1.
5 Units V V nA μA nF V μs Notes:1.
Valid provided that electrodes are kept at ambient temperature Notes:2.
Test Condition : IF=0.
5A, RL=100Ω Version : C09 Small Signal Diode Rating and Sharacteristic Curves VBO Δ IF=10m ΔVF I(BO)F V IB I(BO)R VB VF VBO IR=10m Power Dissipation (mW) FIG 1 Admissible Power Dissipation Curve 160 120 80...


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