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MUR1640G

Thinki Semiconductor
Part Number MUR1640G
Manufacturer Thinki Semiconductor
Description 16.0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes
Published Aug 4, 2016
Detailed Description MUR1620G thru MUR1660G ® MUR1620G thru MUR1660G Pb Free Plating Product Pb 16.0 Ampere Heatsink Single Ultra Fast Re...
Datasheet PDF File MUR1640G PDF File

MUR1640G
MUR1640G

Overview
MUR1620G thru MUR1660G ® MUR1620G thru MUR1660G Pb Free Plating Product Pb 16.
0 Ampere Heatsink Single Ultra Fast Recovery Rectifier Diodes Features ¬ Fast switching for high efficiency ¬ Low forward voltage drop ¬ High current capability ¬ Low reverse leakage current ¬ High surge current capability TO-220AC .
419(10.
66) .
387(9.
85) .
139(3.
55) MIN Unit : inch (mm) .
196(5.
00) .
163(4.
16) .
054(1.
39) .
045(1.
15) .
269(6.
85) .
226(5.
75) .
624(15.
87) .
548(13.
93) Mechanical Data ¬ Case: Molded TO-220AC ¬ Epoxy: UL 94V-0 rate flame retardant ¬ Terminals: Solderable per MIL-STD-202 method 208 ¬ Polarity:Color band denotes cathode ¬ Mounting position: Any ¬ Weight: 2.
1 gram approximately .
177(4.
5)MAX .
50(12.
7)MIN .
038(0.
96) .
019(0.
50) .
1(2.
54) .
1(2.
54) .
025(0.
65)MAX MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20% CHARACTERISTICS Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Forward Surge Current @TA =125℃ 8.
3ms Single Half Sine-Wave Super Imposed on Rated Load(JEDEC Method) Peak Forward Voltage at 16.
0A DC Maximum DC Reverse Current @TJ=25℃ at Rated DC Blocking Voltage @TJ=125℃ Maximum Reverse Recovery Time(Note1) Typical Junction Capacitance (Note2) Typical Thermal Resistance (Note3) Operating and Storage Temperature Range SYMBOL VRRM VRMS VDC I(AV) MUR1620G 200 140 200 IFSM VF IR TRR CJ RθJA TJ,TSTG 0.
95 NOTES:1.
Measured with IF=0.
5A,IR=1A,IRR=0.
25A 2.
Measured at 1.
0 MHZ and applied reverse voltage of 4.
0VDC.
3.
Thermal resistance junction to ambient MUR1640G 400 280 400 16.
0 300 1.
25 5.
0 50 35-50 80 2.
0 -55 to + 150 MUR1660G 600 420 600 UNIT V V V A A 1.
50 V μA nS pF ℃/W ℃ Rev.
05 © 2006 Thinki Semiconductor Co.
, Ltd.
Page 1/2 http://www.
thinkisemi.
com/ MUR1620G thru MUR1660G ® RATING AND CH...


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