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KSD1691

Part Number	KSD1691
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Aug 10, 2016
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage : VCE(sa...
Datasheet	KSD1691 PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector Current -IC= 5A ·Low Collector Saturation Voltage : VCE(sat)= 0.
3V(Max.
)@ IC= 2A ·Complement to Type KSB1151 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage 60 V 60 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 7 V 5 A ICP Collector Current-Pulse IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature Tstg Storage Temperature Range 8 A 1 A 20 W 1.
3 150 ℃ -55~150 ℃ KSD1691 isc website：www.
iscsemi.
cn 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL ...

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