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KSD5010

Part Number	KSD5010
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Aug 10, 2016
Detailed Description	INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5010 DESCRIPTION ·High Breakdown ...
Datasheet	KSD5010 PDF File

Overview

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5010 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 2.
5 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 10 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Sem...

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