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KSD560

Part Number	KSD560
Manufacturer	Inchange Semiconductor
Description	Silicon NPN Power Transistor
Published	Aug 10, 2016
Detailed Description	isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor KSD560 DESCRIPTION ·Collector-Emitter Sustaining Vo...
Datasheet	KSD560 PDF File

Overview

isc Silicon NPN Darlington Power Transistor INCHANGE Semiconductor KSD560 DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 100V(Min) ·High DC Current Gain : hFE= 2000(Min) @IC= 3.
0A ·Low Saturation Voltage ·Complement to Type KSB601 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low frequency power amplifiers and low speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 150 VCEO Collector-Emitter Voltage 100 VEBO Emitter-Base Voltage 7 IC Collector Current-Continuous 5 ICP Collector Current-Peak 8 IB Base Current-Continuous 0.
5 Co...

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