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KSD569

Inchange Semiconductor
Part Number KSD569
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 10, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD569 DESCRIPTION ·High Collector C...
Datasheet PDF File KSD569 PDF File

KSD569
KSD569

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD569 DESCRIPTION ·High Collector Current:: IC= 7A ·Low Collector Saturation Voltage : VCE(sat)= 0.
5V(Max)@IC= 5A ·Complement to Type KSB708 APPLICATIONS ·Designed for low-frequency power amplifiers and low-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage IC Collector Current-Continuous 7V 7A ICM Collector Current-Peak 15 A IB Base Current-Continuous Total Power Dissipation @ TC=25℃ PC Total Power Dissipation @ Ta=25℃ TJ Junction Temperature 3.
5 A 40 W 1.
5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD569 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakd...


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