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KSD5013

Inchange Semiconductor
Part Number KSD5013
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 11, 2016
Detailed Description INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5013 DESCRIPTION ·High Breakdown ...
Datasheet PDF File KSD5013 PDF File

KSD5013
KSD5013

Overview
INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5013 DESCRIPTION ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6V IC Collector Current- Continuous 6 A ICP Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 60 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.
iscsemi.
cn 1 INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification KSD5013 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 1A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 1A ICBO Collector Cutoff Current VCB= 800V ; IE= 0 IEBO Emitter Cutoff Current VEB= 4V ; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V fT Current-Gain—Bandwidth Product VECF C-E Diode Forward Voltage tf Fall Time IC= 1A; VCE= 10V IF= 6A IC= 5A , IB1= 1A ; IB2= -2A RL= 40Ω; VCC= 200V MIN TYP.
MAX UNIT 5.
0 V 1.
5 V 10 μA 40 130 mA 8 3 MHz 2.
0 V 0.
4 μs isc website：www.
iscsemi.
cn 2 ...


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